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Salient

Salient is an excellent design with a fresh approach for the ever-changing Web. Integrated with Gantry 5, it is infinitely customizable, incredibly powerful, and remarkably simple.

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Publications

Publications

2007 2006 2005 2004 2003 2002 2001 2000

 

  • J165. H.L. Leong, C.L Gan, C.V. Thompson, K.L Pey, and H.Y. Li, Application of Contact Theory to Metal-Metal Bonding of Silicon Wafers, to appear in J. Appl. Phys.
  • J164. R. Tadepalli, K.T. Turner and C.V. Thompson, Effects of Patterning on the Interface Toughness of Wafer-Level Cu-Cu Bonds, to appear in Acta Mater.
  • J163 Z.-S. Choi, R. Moenig, and C.V. Thompson, Effects of Microstructure on the Formation, Shape, and Motion of Voids During Electromigration in Passivated Copper Interconnects, to appear in J. Mater. Res.
  • J162. Z.-S. Choi, R. Moenig, and C. V. Thompson, Activation Energy and Pre-Factor for Surface Electromigration and Void Drift in Cu Interconnects, to appear in J.Appl. Phys.
  • J161. R. Tadepalli, K.T. Turner, and C.V. Thompson, Mixed Mode Interface Toughness of Wafer- Level Cu-Cu Bonds Using Asymmetric Chevron Test, to appear in J. Mech. Phys. Sol.
  • J160. Z.-S. Choi, R. Moenig, and C. V. Thompson, Dependence of the Electromigration Flux on the Crystallographic Orientations of Different Grains in Polycrystalline Copper Interconnects, Appl. Phys. Letts. 90, 241913 (2007).
  • J159. S.M. Alam, C.L. Gan, C.V. Thompson, D.E. Troxel, Reliability computer-aided design tool for full-chip electromigration analysis and comparison with different interconnect metallizations, Microelectronics Journal 38, 463 (2007).
  • J157. K.Y. Zang KY, Y.D.Wang YD, L.S. Wang, S. Tripathy, S.J. Chua, and C.V. Thompson, Nanoheteroepitaxy of GaN on a nanopore array of Si(111) surface, Thin Solid Films 515 (10): 4505 (2007).
  • J156. C.W. Chang, C.V. Thompson, C.L. Gan, K.L. Pey, W.K. Choi, and Y. K. Lim,Effects of Micro-Voids on the Line-Width Dependence of Electromigration Failure of Dual-Damascene Copper Interconnects,, Appl. Phys. Letts. 90, 193505 (2007).
  • J155. Rajappa Tadepalli and Carl V. Thompson, Formation of Cu–Cu Interfaces with Ideal Adhesive Strengths via Room Temperature Pressure Bonding in Ultrahigh Vacuum, , Appl. Phys. Lett. 90, 151919 (2007).
  • J154. H.Li, Q. Zhang, N. Peng, N. Liu, Y.C. Lee, O.K. Tan, N. Marzari, and C.V. Thompson, Charge-Trapping Effects Caused by Ammonia in Carbon Nanotubes, J. Nanoscience and Nanotechnology 7, 335 (2007).
  • J153. R. Krishnan and C.V. Thompson, Mono-Domain High Aspect Ratio 2-D and 3-D Ordered Porous Alumina structures with Independently Controlled Pore Spacing and Diameter, to appear in Advanced Materials
  • J152. C.-W. Pao, D.J. Srolovitz, and C.V. Thompson, Effects of Surface Defects on Surface Stress, Physical Review B74, 155437 (2006).
  • J151. C.W. Chang, Z.S. Choi, C.V. Thompson, et al. Electromigration Resistance in a Short Three-Contact interconnect Tree, J. Appl. Phys. 99, 094505 (2006).
  • J150. K.Y. Zang, Y.D. Wang, S. J. Chua, L.S. Wang, S. Tripathy and C.V. Thompson, Nanoheteroepitaxial Lateral Overgrowth of GaN on Nanoporous Si (111), Appl. Phys. Letts. 88, 141925 (2006).
  • J149. C. Friesen and C.V. Thompson CV, Comment on Compressive Stress in Polycrystalline Volmer-Weber fFlms, Physical Review Letters 95, 229601 (2005).
  • J148. K.Y.Zang, L.S. Wang, S.J. Chua, and C.V. Thompson, Structural Analysis of Metalorganic Chemical Vapor Deposited AlN Nucleation Layers on Si(111), J. Cryst. Growth 268, 515 (2004).
  • J147. H.Q. Le, S.J. Chua, Y.W. Koh, Growth of Single Crystal ZnO Nanorods on GaN Using an Aqueous Solution Method, Appl. Phys. Let. 87, 101908 (2005).
  • J146. T. Trimble, L. Tang, N. Vasiljevic, N. Dimitrov, M. van Schilfgaarde, C. Friesen, C. V. Thompson, S. C. Seel, J.A. Floro, and K. Sieradzki, Anion Adsorption Induced Reversal of Coherency Strain, Phys. Rev. Letts. 95, 166106 (2005).
  • J145. R. Krishnan, H.Q. Nguyen, Carl V. Thompson, W.K. Choi, and Y.L. Foo, Wafer-Level Ordered Arrays of Carbon Nanotubes with Controlled Size and Spacing on Silicon, Nanotechnology 16, 841 (2005).
  • J143. A.L. Giermann and C.V. Thompson, Solid State Dewetting for Ordered Arrays of Crystallographically Oriented Metal Particles, Appl. Phys. Lett. 86, 121903 (2005).
  • J142. C.V. Thompson, Perspectives on Experiments, Modeling and Simulations of Grain Growth, to appear in “The Handbook of Materials Modeling, Volume I (Methods and Models)”, ed. Sidney Yip.
  • J141. C. Friesen and C.V. Thompson, Correlation of Stress and Atomic-Scale Surface Roughness Evolution During Intermittent Homoepitaxial Growth of (111)-Oriented Ag and Cu, Phys. Rev. Letts. 93, 056104 (2004).
  • J140. J. Jia, M. Li, C.V. Thompson, Amorphization of Silicon by Femtosecond Laser Pulses, Appl. Phys. Lett. 84, 3205 (2004).
  • J139. K. Zang, S. J. Chua, L.S. Wang and C.V. Thompson, Evolution of AlN Buffer Layers on Silicon and Effects on the Properties of Epitaxial GaN Films, Phys Stat Sol.0, 2067 (2004).
  • J138. C. Friesen, S.C. Seel, and C.V. Thompson, Reversible Stress Changes at All Stages of Volmer-Weber Film Growth, J. Appl. Phys. 95, 1011 (2004).
  • J136. J. Zhao, L. Lu, C.V. Thompson, Y.F. Lu, and W.D. Song, Preparation of (001)-Oriented PZT Thin Films on Silicon Wafers Using Pulsed Laser Deposition, J. Cryst. Growth 225, 173 (2001).
  • J135. K.P. Liew, R.A. Bernstein, and C.V. Thompson, Stress Development and Relaxation During Reactive Formation of Ni2Si Films, J. Materials Research 19, 676 (2004).
  • J134. S.M. Alam, D.E. Troxel, and C.V. Thompson, Layout-Specific Circuit Evaluation in 3D Integrated Circuits, Analog Integrated Circuits and Signal Processing 35, 199 (2003).
  • J133. F. Ross, C.V. Thompson, T. Chiang and H.H. Sawin, Ion-Induced Chemical Vapor Deposition of Copper Films with Nano-Cellular Microstructures, Appl. Phys.Letts. 83, 1225 (2003).
  • J132. S.C. Seel and C.V. Thompson, Piezoresistive Microcantilevers for in-situ Stress Measurements During Thing Film Deposition, Rev. Sci. Instrum. 76, 075103 (2005).
  • J131. C.L. Gan, C.V. Thompson, K.L. Pey and W.K. Choi, Experimental Characterization and Modeling of the Reliability of 3-Terminal Dual-Damascene Cu Interconnect Trees, J. Appl. Phys. 94, 1222 (2003).
  • J130. S.K. Donthu, M.M. Vora, S.K. Lahiri, C.V. Thompson, and S. Yi, Activation Energy Determination For Recrystallization In Electroplated Copper Films Using Differential Scanning Calorimetry, J. Electronic Materials 32, 531 (2003).
  • J129. S.C. Seel and C.V. Thompson, Tensile Stress Generation During Island Coalescence for Variable Island-Substrate Contact Angle, J. Appl. Phys. 93, 9038 (2003).
  • J128. C. Friesen and C.V. Thompson, Reversible Stress Relaxation during Precoalescence Interruptions of Volmer-Weber Thin Film Growth, Phys. Rev. Letters, 89 (2), 126103 (2002).
  • J127. C.L. Gan, C.V. Thompson, K.L Pey, W.K. Choi, H.L. Tay and M.K. Radhakrishnan, Effect of Current Direction on the Lifetime of Different Levels of Cu Dual-Damascene Metallization, Appl. Phys. Letters 79, 4592 (2001).
  • J126. M.J. Kobrinsky, G. Dehm, C. V. Thompson, and E. Arzt, Effects of Thickness on the Characteristic Length Scale of Dislocation Plasticity in Ag Thin Films, Acta Mater. 49, 3597-3607 (2001).
  • J125. C. S. Hau-Riege and C.V. Thompson, Electromigration in Cu Interconnects with Very Different Grain Structures, Appl. Phys. Letters 78, 3451 (2001).
  • J124. J. A. Floro, S. J. Hearne, J. A. Hunter, and P. Kotula, E. Chason, S. C. Seel and C. V. Thompson, The Dynamic Competition Between Stress Generation and Relaxation Mechanisms During Coalescence of Volmer-Weber Thin Films, J. Appl. Phys. 89, 4886 (2001).
  • J123. C.V. Thompson, Structure Evolution During Processing of Polycrystalline Films, Annual Reviews of Materials Science 30,159 (2000).
  • J122. C.V. Thompson, Grain Growth and Evolution of Other Cellular Structures, Solid State Physics, 55 (2000).
  • J121. S.C. Seel, C.V. Thompson, S.J. Hearne and J.A. Floro, Tensile Stress Evolution During Deposition of Volmer-Weber Thin Films, J. Appl. Phys 88, 7079-7086 (2000).
  • J120. M.J. Kobrinsky, C.V. Thompson, and M. Gross, Diffusional Creep in Damascene Cu Lines, J. Appl. Phys 89, 91-98 (2001).
  • J119. S.P. Hau-Riege and C.V. Thompson, The Effects of the Mechanical Properties of the Confinement Material on Electromigration in Metallic Interconnects, J. Mater. Res. 15, 1797 (2000).
  • J118. S.P. Hau-Riege and C.V. Thompson, Electromigration-Saturation in a Simple Interconnect Tree, J. Applied Physics 88, 2382-85 (2000).
  • J117. C.S. Hau-Riege and C.V. Thompson, The Effects of Microstructural Transitions at Width Transitions on Interconnect Reliability, J. Appl. Phys. 87, 8467 (2000).
  • J115. C.S. Hau-Riege, S.P. Hau-Riege and C.V. Thompson, Simulation of Microstructural Evolution Induced by Scanned Laser Annealing of Metallic Interconnects, J. of Elec. Mat. 30, 11-16 (2001).
  • J114. C.S. Hau-Riege and C.V.Thompson, Use of Scanned laser Annealing to Control the Bamboo Grain Length of Cu Interconnects, Appl. Phy. Lett. 77, 352 (2000).
  • J113. S.P. Hau-Riege and C.V. Thompson, Experimental Characterization and Modeling of The Reliability of Interconnect Trees, J. Applied Physics 89, 601-609 (2001).
  • J112. W.Fayad, M.J. Kobrinsky, and C.V.Thompson, An Analytic Model for the Development of Bamboo Microstructures in Thin Film Strips Undergoing Normal Grain Growth, Phys. Rev. B62, 5221 (2000).
  • J111. W.Fayad, V. K. Andleigh, and C.V. Thompson, Modeling of the Effects of Crystallographic Orientation on Electromigration-Limited Reliability of Interconnects with Bamboo Grain Structures, J. Material Research 16, no. 2, 413-416 (2001).
  • J109. S.P. Hau-Riege and C.V. Thompson, In-Situ Transmission Electron Microscope Studies of the Kinetics of Abnormal Grain Growth in Electroplated Copper Films, App. Phy. Let. 76, 309 (2000).
  • J108. J. Greiser, P. Mullner, C.V. Thompson, and E. Arzt, Growth of Giant Grains in Silver Thin Films, Scripta Materialia 41, 709 (1999).
  • J107. M.J. Kobrinsky and C.V. Thompson, Activation Volume for Inelastic Deformation in Polycrystalline Ag Thin Films, Acta Materialia 48, 625 (2000).
2018 2017 2016 2015 2014 2013 2012 2011 2010 2009 2008

 

  • J267. D. Perego, J.H.S. Teng, X. Wang, Y. Shao-Horn, and C.V. Thompson, High-performance polycrystalline RuOx cathodes for thin film Li-ion batteries, Electrochimica Acta (in press).
  • J266. H.K. Mutha, H.J. Cho, M. Hashempour, B.L. Wardle, C.V. Thompson, E. N. Wang, Salt rejection in flow-between capacitive deionization devices, Desalination 437, 154–163 (2018). [DOI: 10.1016/j.desal.2018.03.008]
  • J265. J. Miao and C.V. Thompson, Kinetic Study of the Initial Lithiation of Amorphous Silicon Thin Film Anodes, Journal of The Electrochemical Society 165 (3) A650-A656 (2018). [DOI: 10.1149/2.1011803jes]
  • J264. A.J. Birnbaum, C.V. Thompson, J.C. Steuben, A. P. Iliopoulos, and J. G. Michopoulos, Oxygen-induced giant grain growth in Ag films, Appl. Phys. Lett. 111, 163107 (2017). [DOI: 10.1063/1.4998741]

  • J263. R.I. Made , Gao Yu, G.J. Syaranamual, W.A. Sasangka, Zhang Li, X.S. Nguyen, Y.Y. Tay, J. S. Herrin, C.V. Thompson, and C.L. Gan, Characterization of Defects Generated During Constant Current InGaN-on-Silicon LED Operation, Microelectronics Reliability 76-77, 561 (2017). [DOI: 10.1016/j.microrel.2017.07.072]
  • J262. W.A. Sasangka, G.J. Syaranamual, Y. Gao, R.I. Made, C.L. Gan, and C.V. Thompson, Improved reliability of AlGaN/GaN-on-Si high electron mobility transistors (HEMTs) with high density silicon nitride passivation, Microelectronics Reliability 76-77, 287 (2017). [DOI: 10.1016/j.microrel.2017.06.057]
  • J261. R. Tatara; D. Kwabi, T.P. Batcho, M. Tulodziecki, K. Watanabe, H.-M. Kwon, M. Thomas, K. Ueno, C.V. Thompson, K. Dokko, Y. Shao-Horn, and M. Watanabe, "Oxygen Reduction Reaction in Highly Concentrated Electrolyte Solutions of Lithium Bis(trifluoromethanesulfonyl)amide/Dimethyl Sulfoxide," J. Phys. Chem. C 121, 9162–9172 (2017). DOI: 10.1021/acs.jpcc.7b01738
  • J260. H. Mutha, Y. Lu, I. Stein, H.J. Cho, M. Suss, T. Laoui, C.V. Thompson, B.L. Wardle, and E.N. Wang, "Porosimetry and packing morphology of vertically-aligned carbon nanotube arrays via impedance spectroscopy, Nanotechnology 28, 05LT01 (2017). DOI:10.1088/1361-6528/aa53aa
  • J259. W. Zheng, Q. Cheng, D. Wang, and C.V. Thompson, "High-performance solid-state on-chip supercapacitors based on Si nanowires coated with ruthenium oxide via atomic layer deposition," J. of Power Sources 341, 10 (2017). DOI: 10.1016/j.jpowsour.2016.11.093
  • J258. S.C. Tan, H. Zhao, C.V. Thompson Fabrication of high aspect ratio AFM probes with different materials inspired by TEM “lift-out” method, Journal of Vacuum Science & Technology B 34 (5), 051805 (2016). DOI: 10.1116/1.4961595
  • J257. W.A. Sasangka, G.J. Syaranamual, R. I. Made, C.L. Gan, and C.V. Thompson, Threading Dislocation Movement in AlGaN/GaN-on-Si High Electron Mobility Transistors under High Temperature Reverse Bias Stressing, AIP Advances 6 , 095102 (2016). DOI: 10.1063/1.4962544
  • J256. D. Kwabi, David, T.P. Batcho, S. Feng, L. Giordano, C.V. Thompson, Y. Shao-Horn, The Effect of Water on Discharge Product Growth and Chemistry in Li-O2 Batteries, to appear in Chem Phys. Phys. Chem. (2016)
  • J255. Gye Hyun Kim, Wen Ma, Bilge Yildiz, and Carl V. Thompson, Effect of Annealing Ambient on Anisotropic Retraction of Film Edges During Solid-State Dewetting of Thin Single Crystal Films, J. Appl. Phys. 120, 075306 (2016).
  • J254. Ahmed Al-Obeidi, Dominik Kramer, Steven T. Boles, Reiner Mönig, and Carl V. Thompson, Mechanical Measurements on Lithium Phosphorous Oxynitride Coated Silicon Thin Film Electrodes for Lithium-ion Batteries during Lithiation and Delithiation, Appl. Phys. Letts. 109, 071902 (2016).
  • J253. G.J. Syaranamual, W.A. Sasangka, R.I. Madea, S. Arulkumaran, G.I. Nga, S.C. Foo, C.L. Gan, C.V. Thompson, Role of two-dimensional electron gas (2DEG) in AlGaN/GaN high electron mobility transistor (HEMT) ON-state degradation, to appear in Microelectronics Reliability (2016).
  • J252. S.Y. Sayed, K.P.C. Yao, D.G. Kwabi, T.P. Batcho, C.V. Amanchukwu, S. Fengs, C.V. Thompson and Y. Shao-Horn, Revealing Instability and Irreversibility in Nonaqueous Sodium-O2 Battery Chemistry, Chemical Communications 52, 9691 (2016).
  • J251. R.V. Zucker, G.H. Kim, J. Ye, W.C. Carter, and C.V. Thompson, The mechanism of corner instabilities in single-crystal thin films during dewetting, J. Appl. Phys. 119, 125306 (2016). DOI: 10.1063/1.4944712
  • J250. D.G. Kwabi, M. Tulodziecki, N. Pour, D.M. Itkis, C.V. Thompson, and Y. Shao-Horn, Controlling Solution-mediated Reaction Mechanisms of Oxygen Reduction Using Potential and Solvent for Aprotic Lithium-oxygen Batteries, J. Phys. Chem. Lett. 7, 1204 (2016).
  • J249. R.V. Zucker, W.C. Carter, CV. Thompson, Power-Law Scaling Regimes for Solid-State Dewetting of Thin Films, Scripta Materialia 116, 143 (2016). DOI: 10.1016/j.scriptamat.2016.01.039
  • J248. D.G. Kwabi, V.S. Bryantsev, T.P. Batcho, D.M. Itkis, C.V. Thompson, and Y. Shao-Horn, Experimental and Computational Analysis of the Solvent-Dependent O2/Li+-O2- Redox Couple: Standard Potentials, Coupling Strength, and Implications for Lithium–Oxygen Batteries, Angewandte Chemie 128, 3181 (2016).
  • J247. A. Al-Obeidi, D. Kramer, R. Moenig, and C.V. Thompson, Mechanical stresses and crystallization of lithium phosphorous oxynitride-coated germanium electrodes during lithiation and delithiation, J. Power Sources 306, 817 (2016).
  • J246. C.Y. Khoo, H. Liu, W.A. Sasangka, R.I. Made. N. Tamura, M. Kunz, A.S. Budiman, C.L. Gan, and C.V. Thompson, Impact of deposition conditions on the crystallization kinetics of amorphous GeTe films. J. Mat. Sci. 51(4), 1864 (2016).
  • J245. S. A. Jang, H. J. Lee, C. V. Thompson, C. A. Ross, and Y. J. Oh, Crystallographic analysis of the solid-state dewetting of polycrystalline gold film using automated indexing in a transmission, electron microscope, APL Mater. 3, 126103 (2015).
  • J244. A. Al-Obeidi, D. Kramer, C.V. Thompson, and R. Mönig. Mechanical stresses and morphology evolution in germanium thin film electrodes during lithiation and delithiation, J. Power Sources 297, 472 (2015).
  • J243. N. Ortiz-Vitoriano, T.P. Batcho, D.G. Kwabi, B. Han, N. Pour, K.P.C. Yao, C.V. Thompson and Y. Shao-Horn, Rate-Dependent Nucleation and Growth of NaO2 in Na-O2 batteries, J. Phys. Chem. Lett. 6, 2636 (2015).
  • J242. C.Q. Lai, W. Zheng, W. K. Choi, and C.V. Thompson, Metal Assisted Anodic Etching of Silicon, Nanoscale 7, 11123 (2015).
  • J241. W.A. Sasangka, C.L. Gan, D. Lai, C.S. Tan, and C.V. Thompson, Characterization of the Young’s Modulus, Residual Stress and Fracture Strength of Cu-Sn-In Thin Films using Combinatorial Deposition and Micro-Cantilevers, Journal of Micromechanics and Microengineering 25, 035023 (2015).
  • J240. G.H. Kim and C.V. Thompson, Effect of surface energy anisotropy on Rayleigh-like solid-state dewetting and nanowire stability, Acta Materialia 84, 190 (2015)
  • J239. H.Z. Yu and C.V. Thompson, Stress engineering using low oxygen background pressures during Volmer-Weber growth of polycrystalline nickel films, J. Vac. Sci. and Tech. A33, 021504, (2015).
  • J238 D.G. Kwabi, T.P. Batcho, C.V. Amanchukwu, N. Ortiz-Vitoriano, P. Hammond, C.V. Thompson, and Y. Shao-Horn, Chemical Instability of Dimethyl Sulfoxide in LithiumAir Batteries, J. Phys. Chem. Letts. 5, 2850 (2014).
  • J237. H.Z. Yu and C.V. Thompson, Effects of oblique-angle deposition on intrinsic stress evolution during polycrystalline film growth, Acta Materialia 77, 284-293 (2014).
  • J236. R.S. Omampuliyur, M. Bhuiyan, Z. Han, Z. Jing, L. Li, E.A. Fitzgerald, C.V. Thompson, W. K. Choi, Nanostructured Thin Film Silicon Anodes for Li-ion Microbatteries, J. Nanosci. Nanotechnol. 15, 4926-4933 (2015).
  • J235. H.Z. Yu and C.V. Thompson, Correlation of shape changes of grain surfaces and reversible stress evolution during interruptions of polycrystalline film growth, Appl. Phys. Letts. 104, 141913 (2014).
  • J234. Feng Gao, Di Chen, Harry L. Tuller, Carl. V. Thompson, and Tomás Palacios, On the redox origin of surface trapping in AlGaN/GaN high electronmobility transistors, J. of Appl. Phys. 115, 124506 (2014).
  • J233. Hang Z. Yu, Jeffrey S. Leib, Steven T. Boles, and Carl V. Thompson, Fast and Slow Stress Evolution Mechanisms During Interruptions of Volmer-Weber Growth, J. Appl. Phys. 115, 043251 (2014).
  • J232. Hang Z. Yu and Carl V. Thompson, Grain Growth and Complex Stress Evolution During Volmer-Weber Growth of Polycrystalline Thin Films , Acta Materialia 67, 189 (2014).
  • J231. F. Gao, S.C. Tan, J.A. del Alamo, C.V. Thompson, and T. Palacios, Impact of Water-Assisted Electrochemical Reactions on the OFF-State Degradation of AlGaN/GaN HEMTs, IEEE Trans. Electron Devices 61, 444 (2014).
  • J230. S.T. Boles, C.V. Thompson, O. Kraft, and R. Mönig, In situ tensile and creep testing of lithiated silicon nanowires, Applied Physics Letters 103, 263906 (2013); 104, 099902 (2014).
  • J229. C. Q. Lai, He Cheng, W. K. Choi, and C.V. Thompson, Mechanics of Catalyst Motion during Metal Assisted Chemical Etching of Silicon, J. Phys. Chem. C 117, 20802 (2013).
  • J228. B.M. Gallant, D.G. Kwabi, R.R. Mitchell, J. Zhao, C.V. Thompson, and Y. Shao-Horn Influence of Li2O2 morphology on oxygen reduction and evolution kinetics in Li-O2 batteries, Energy and Environmental Science 6, 2518 (2013).
  • J227. R.V. Zucker, G.H. Kim, W.C. Carter, C.V. Thompson, A model for solid state dewetting of a fully faceted thin film, Comptes Rendus de Physique 14, 564 (2013).
  • J226. Z. Wang, G. Shimon, X. Liu, C. V. Thompson, C. A. Ross, W. K. Choi, A. O. Adeyeye, Synthesis and magnetic properties of large-area ferromagnetic cylindrical nanoshell and nanocup arrays, J. Appl. Phys. 113, 214301 (2013)
  • J225. L. Zhong, R.R. Mitchell, Y. Liu, B.M. Gallant, C.V. Thompson, J.Y. Huang, S.X. Mao, and Y. Shao-Horn, In situ Transmission Electron Microscopy Observations of Electrochemical Oxidation of Li2O2, Nanoletters 13, 2209–2214 (2013).
  • J224. R.R. Mitchell, B.M. Gallant, Y. Shao-Horn and C.V. Thompson, Mechanisms of Morphological Evolution of Li2O2 Particles During Electrochemical Growth, J. Phys. Chem. Letts. 4, 1060 (2013).
  • J223. G.H. Kim, R.V. Zucker, W.C. Carter, and C.V. Thompson, Quantitative analysis of anisotropic edge retraction by solid-state dewetting of thin single crystal films, J. Appl. Phys. 113, 043512 (2013).
  • J222. R.R. Mitchell, N. Yamamoto, H. Cebeci, B.L. Wardle, and C.V. Thompson, A Technique for Spatially-Resolved Contact Resistance-Free Electrical Conductivity Measurements of Aligned-Carbon Nanotube/Polymer Nanocomposites, Composites Science and Technology 74(24), 205-20 (2013).
  • J221. Yong-Jun Oh, Jung-Hwan Kim, Carl V. Thompson, and Caroline A. Ross, Templated Assembly of Co-Pt Nanoparticles via Thermal and Laser-Induced Dewetting of Bilayer Metal Films, Nanoscale 5(1), 401-407 (2013).
  • J220. P. Lianto, S. Yu, J. Wu, C.V. Thompson and W.K. Choi, Vertical etching with isolated catalysts in metal-assisted chemical etching of silicon, Nanoscale 4(23), 732-7539 (2012).
  • J219. B.M. Gallant, R.R. Mitchell, D.G. Kwabi, J. Zhou, L. Zuin, C.V. Thompson, and Y. Shao-Horn, Chemical and Morphological Changes of Li-O2 Battery Electrodes Upon Cycling, J. Phys. Chem. C 116(39), 20800-20805 (2012).
  • J218. R. Enright, N. Miljkovic, A. Al-Obeidi, C.V. Thompson, and E.N. Wang, Superhydrophobic condensation: The role of pinning barriers and size-scale, Langmuir 28, 1442 (2012).
  • J217. F. Gao, D. Chen, B. Lu, H.L. Tuller, C.V. Thompson, S. Keller, U.K. Mishra, and T. Palacios, Impact of Moisture and Fluorocarbon Passivation on the Current Collapse of AlGaN/GaN HEMTs, Electron Device Letters 33, 1378 – 1380 (2012).
  • J216. C.Q. Lai, C.V. Thompson, and W.K. Choi, Uni-, Bi- and Tri-Directional Wetting Caused by Nanostructures with Anisotropic Surface Energies, Langmuir 28(30), 11048–11055 (2012).
  • J215. W. Jiang, W. Bao, C.V.Thompson, and D.J. Srolovitz, Phase Field Approach for Simulating Solid-State Dewetting Problems, Acta Materialia 60, 5578–5592 (2012).
  • J214. A.L. Giermann and C.V. Thompson, Three-dimensional graphoepitaxial alignment resulting from solid-state dewetting of Au films on surfaces with monoperiodic topography, Applied Physics Letters 101, 051904 (2012).
  • J213. C.V. Thompson, Solid State Dewetting of Thin Films, Ann. Rev. of Materials Research 42, 399-334 (2012).
  • J212. G.D. Nessim, A. Al-Obeidi, H. Grisaru, E.S. Polsen, C.R. Oliver, T. Zimrin, A.J. Hart, D. Aurbach, and C.V. Thompson, Enhanced synthesis of vertically aligned carbon nanotubes via in-situ generation of water vapor by preheating of added oxygen, Carbon 50, 4002 (2012).
  • J211. L. Li, J. Joh, J.A. del. Alamo, and C.V. Thompson, Spatial distribution of structural degradation under high-power stress in AlGaN/GaN HEMTs, Appl. Phys. Letts. 100, 172109 (2012).
  • J210. R.I. Made, C.L. Gan, L. Yan, K.H. Boon Kor, H.L. Chia, K.L. Pey, and C.V. Thompson, Experimental characterization and modeling of the mechanical properties of Cu–Cu thermocompression bonds for three-dimensional integrated circuits, Acta Materialia 60, 578 (2012).
  • J209. F. Gao, B. Lu, L. Li, S. Kaun, J.S. Speck, C.V. Thompson, and T. Palacios, Role of oxygen in the OFF-state degradation of AlGaN/GaN high electron mobility transistors, Appl. Phys. Letts. 99, 223506 (2011).
  • J208. W.A. Sasangka, C.L., C.V. Thompson, W.K. Choi, and J. Wei, Influence of Bonding Parameters on the Interaction Between Cu and Noneutectic Sn-In Solder Thin Films, J. Electronic Materials 40, 2329-3336 (2011).
  • J207. Robert R. Mitchell, Betar M. Gallant, Carl V. Thompson and Yang Shao-Horn, All-carbon-nanofiber electrodes for high-energy rechargeable Li–O2 batteries, Energy Environ. Sci. 4, 2952 (2011).
  • J206. Zung-Sun Choi, Junghoon Lee, Meng Keong Lim, Chee Lip Gan, Carl V. Thompson, Void Dynamics in Copper-Based Interconnects, J. Appl. Phys. 110, 033505 (2011).
  • J205. A.L. Giermann and C.V. Thompson, Requirements for graphoepitaxial alignment through solid-state dewetting of Au films, J. Appl. Phys. 109, 083520 (2011).
  • J204. J. Oh and C. V. Thompson, The role of electric field in pore formation during aluminum anodization, Electrochemica Acta 56, 4044 (2011).
  • J203. J. Ye and C.V. Thompson, Templated Solid-State Dewetting to Controllably Produce Complex Patterns, Advanced Materials 23, 1567 (2011).

 

  • J202. J. Oh and C.V. Thompson, Abnormal Anodic Aluminum Oxide Formation in Confined Structures for Lateral Pore Arrays, J. Electrochem. Soc. 158, C71 (2011).
  • J201. J. Oh and C.V. Thompson, A Tungsten Interlayer Process for Fabrication of Through-pore Anodic Aluminum Oxide Scaffolds on Gold Substrates, J. Eelectrochem. Soc. 158, K11 (2011).
  • J200. J. Ye and C.V. Thompson, Regular pattern formation through the retraction and pinch-off of edges during solid-state dewetting of patterned single crystal films, Phys. Rev. B82, 193408 (2010).
  • J199. G.D. Nessim, M. Seita, D.L. Plata, PhD; K.P. O'Brien, A.J. Hart, E.R Meshot; C.M. Reddy; P.M Gschwend; C.V Thompson, Precursor gas chemistry determines the crystallinity of carbon nanotubes synthesized at low temperature, Carbon 49, 804 (2011).
  • J198. J. Ye and C.V. Thompson, Anisotropic edge retraction and hole growth during solid-state dewetting of single crystal nickel thin films, Acta Materialia 59, 582 (2011).
  • J197. H Zhang, C V Thompson, F Stellacci and J T L Thong, Parallel fabrication of polymer-protected nanogaps, Nanotechnology 21, 385303 (2010).
  • J196. J. Leib and C.V. Thompson, Weak Temperature Dependence of Stress Relaxation in As-Deposited Polycrystalline Gold Films, Physical Review B (Rapid Communication) B82, 121402 (2010).
  • J195. Q. Guo, L. Zhang, A.S. Zeiger, Y. Li, K.J. Van Vliet, and C.V. Thompson, Compositional dependence of Young’s moduli for amorphous Cu-Zr films measured using combinatorial deposition on microscale cantilever arrays, Scripta Materialia 64, 41 (2011).
  • J194. S.-W. Chang, V.P. Chuang, S.T. Boles, andC.V. Thompson, Metal-Catalyzed Etching of Vertically-Aligned Polysilicon and Amorphous Silicon Nanowire Arrays by Etching Direction Confinement, Adv. Funct. Mat., 20, 4634 in press (2010).
  • J193. J. Ye and C.V. Thompson, Mechanisms of complex morphological evolution during solid-state dewetting of single-crystal nickel thin films, Appl. Phys. Letts. 97, 071904 (2010).
  • J192. D., P. Makaram andC.V. Thompson, Microscale Oscillating Crack Propagation in Silicon Nitride Thin Films, Appl. Pys. Letts. 97, 071902 (2010).
  • J191. J. Yun, Rui Wang, M. H. Hong, J. T. L. Thong, Y. L. Foo, C. V. Thompson, and W. K. Choi, Converting carbon nanofibers to carbon nanoneedles: catalyst splitting and reverse motion, Nanoscale, 2, 2180 on line (2010).
  • J190. P. Makaram, J. Joh, J.A. del Alamo, T. Palacios, and C.V. Thompson, Evolution of structural defects associated with electrical degradation in AlGaN/GaN high electron mobility transistors, Appl. Phys. Lett. 96, 233509 (2010).
  • J189. S.-W. Chang, J. Oh, S.T. Boles, C.V. Thompson, Fabrication of Silicon Nanopillar-based Nanocapacitor Arrays, Appl. Phys. Letts. 96, 153108 (2010).
  • J188 Q. Guo, J.. Noh, P.K. Liaw, P.D. Rack, Y. Li, C.V. Thompson,Density change upon crystallization in amorphous Zr-Cu-Al thin films, Acta Materialia 58, 3633 (2010).
  • J187. Jia Yun, Rui Wang, W.K. Choi, J.T.L. Thong, C.V. Thompson, Mei Zhu, Y.L. Foo, M.H. Hong, Field emission from a large area of vertically-aligned carbon nanofibers with nanoscale tips and controlled spatial geometry, Carbon 48, 1362 (2010).
  • J186. Gilbert D. Nessim, Donatello Acquaviva, Matteo Seita, Kevin P. O’Brien, and Carl V. Thompson, The Critical Role of the Underlayer Material and Thickness in Grown Vertically Aligned Carbon Nanotubes and Nanofibers on Metallic Substrates by Chemical Vapor Deposition, Adv. Funct. Mat. (2010).
  • J185. Donghyun Kim, Amanda L. Giermann, and Carl V. Thompson, Solid-state Dewetting of Patterned Films, Appl. Phys. Letts. 95, 251903 (2009).
  • J184. Miao Wang, Soo Jin Chua, Han Gao, Jeffery S. Leib, and Carl V. Thompson, A Study on Morphology Control of ZnO Electrodeposited on Au Surface, Journal of the Electrochemical Society 156, D517 (2009).
  • J183. S. T. Boles, E. A. Fitzgerald, C. V. Thompson, C. K. F. Ho, and K. L. Pey, Catalyst Proximity Effects on the Growth of Silicon Nanowires, Journal of Applied Physics 106, 044311, (2009).
  • J182. Osama M. Nayfeh, Dimitri A. Antoniadis, Steven Boles, Charles Ho, and Carl V. Thompson, Formation of Single Tiers of Bridging Silicon Nanowires for Transistor Applications Using Vapor– Liquid–Solid Growth from Short Silicon-on-Insulator Sidewalls, Small 5, 2440 (2009).
  • J181. J. Leib, R. Monig, C.V. Thompson, Direct Evidence for Effects of Grain Structure on Reversible Compressive Deposition Stresses in Polycrystalline Gold Films, Phys. Rev. Letters 102, 25601 (2009).
  • J180. Gilbert D. Nessim, Matteo Seita, Kevin P. O’Brien, A. John Hart, Pierre Delcoix, and Carl V. Thompson, Low Temperature Synthesis of Vertically Aligned Carbon Nanotubes with Ohmic Contact to Metallic Substrates Enabled by Thermal Decomposition of the Carbon Feedstock, Nano Letters 9, 3398 (2009).
  • J179. S.T. Boles, C.V. Thompson, and E.A. Fitzgerald, Influence of indium and phosphine on Au-catalyzed InP nanowire growth on Si substrates, J. Cryst. Growth 311, 1446 (2009).
  • J178. S.-W. Chang, V.P. Chuang, S.T. Boles, C.A. Ross, and C.V. Thompson, Densely-packed arrays of ultrahigh-aspect-ratio silicon nanowire fabricated using block copolymer lithography and metal-assisted etching, Advanced Functional Materials 19, 2495 (2009).
  • J177. H. L. Leong, C. L. Gan, C. V. Thompson, K. L. Pey, and H. Y. Li, Electromigration-induced bond improvement for three-dimensional integrated circuits, Appl. Phys. Letts. 94 (2009).
  • J176. H. L. Leong, C. L. Gan, R. I. Made, C. V. Thompson, K. L. Pey, and H. Y. Li, Experimental characterization and modeling of the contact resistance of Cu–Cu bonded interconnects, J. Appl. Phys. 105, 033514 (2009).
  • J175. Y. Li, Q. Guo, J.A. Kalb, and C.V. Thompson, Matching Glass-Forming Ability with the Density of the Amorphous Phase, Science 322, 1816 (2008).
  • J174. Qiang Guo, Minghua Li, Yi Li, Luping Shi, Tow Chong Chong, Johannes A. Kalb, and Carl V. Thompson, Crystallization-induced stress in thin phase change films of different thicknesses, Appl. Phys. Lett., 93, 221907 (2008).
  • J173. Yong-Jun Oh, C. A. Ross, Yeon Sik Jung, Yang Wang, Carl V. Thompson, Co nanoparticle arrays made by templated solid-state dewetting, Small, in press.
  • J172. W. K. Choi, T. H. Liew, M. K. Dawood, H. I. Smith , C. V. Thompson, and M. H. Hong, Synthesis of silicon nanowires and nanofin arrays using interference lithography and catalytic etching, Nano Letters 8, 3799 (2008).
  • J171. Gilbert D. Nessim, A. John Hart, Jin S. Kim, Donatello Acquaviva, Jihun Oh, Caitlin D. Morgan, Matteo Seita, Jeffrey S. Leib, and Carl V. Thompson, Tuning of Vertically-Aligned Carbon Nanotube Diameter and Areal Density through Catalyst Pre-Treatment, Nano Letters 8, 3587 (2008).
  • J170. J.A. Kalb, Q.Guo, X. Zhang, Yi Li, C. Sow and C.V. Thompson, "Phase Change Materials in Optically Triggered Microactuators," J. of Microelectromechanical Systems, 17, No. 5, (2008).
  • J169. F.L. Wei, Chee Lip GAn, Tam Lyn Tan, C.S. HaupRiege, A.P. Marathe, F.L. Vlassak and C.V. Thompson, "Electromigration-induced extrusion failures in Cu/low-k Interconnects," J. Appl. Phys. 104, 023529 (2008).
  • J168. F.L. Wei, C.S. Hau-Riege, A.P. Marathe, and C.V. Thompson, "Effects of active atomic sinks and reservoirs on the reliability of Cu/low-k interconnects," J. Appl. Phys. 103, 084513 (2008).
  • J167. J. Oh and C.V. Thompson, "Selective Barrier Perforation in Porous Alumina Andoized on Substrates," Advanced Materials 20, 1368 (2008).
  • J166. W.K. Choi, T.H. Liew, H.G. Chew, F. Zheng, C.V.Thompson, Y. Wang, M.H. Hong, X.D. Wang, L. Li and J. Yun,, "A combined Top-down and Bottom-up approach for Precise Placement of Metal Nanoparticles on Silicon, "Small 4, 330 (2008)
 1999  1998  1997  1996 1995 1994 1993 1992 1991 1990

 

  • J99. V.T. Srikar and C.V. Thompson, Diffusion and electromigration of copper in SiO2-passivated single-crystal aluminum interconnects, Applied Physics Letters 74, 37 (1999).
  • J98. S.P. Riege, C.V. Thompson, and H.J. Frost, Simulation of the Influence of Particles on Grain Structure Evolution in 2-D Systems and Thin Films, Acta Materialia 47,1879 (1999).
  • J97. W.Fayad, C.V. Thompson, and H.J. Frost, Steady State Grain Size Distributions Resulting from Grain Growth in Two Dimensions, Scripta Mater 40, 1199 (1999).
  • J96. Y.-C. Joo, C.V. Thompson, S.P. Baker, and E. Arzt, Electromigration Proximity Effects of Two Neighboring Fast-Diffusion Segments in Single-Crystal Aluminum Lines, J. Appl. Phys. 85, 2108 (1999).
  • J95. M.J. Kobrinsky and C.V. Thompson, The Thickness Dependence of the Flow Stress of Capped and Uncapped Polycrystalline Ag Thin Films, Applied Physics Letters 73, 2429 (1998).
  • J94. J.J. Clement, S.P. Riege, R. Cvijetic, and C.V. Thompson, Methodology for Electromigration Critical Design Rule Evaluation, IEEE Trans. on CAD of Integrated Circuits and Systems, 18, 576 (1999).
  • J93. V.T. Srikar and C.V. Thompson, The Effect of Al3Ti Capping Layers on Electromigration in Single-Crystal Aluminum Interconnects, Applied Physics Letters 72, 21 (1998).
  • J92. C.V. Thompson, Grain Growth in Polycrystalline Thin Films of Semiconductors, Interface Sciences 6, 85 (1998).
  • J91. S.P. Riege and C.V. Thompson, A Hierarchical Reliability Analysis for Circuit Design Evaluation, IEEE Transactions on Electron Devices 45, 2254 (1998).
  • J90. B.D. Knowlton and C.V. Thompson, Simulation of the Temperature and Current Density Scaling of the Electromigration-Limited Reliability of Near-Bamboo Interconnects, Journal of Materials Research 13, 1164 (1998).
  • J89. Y-J. Park and C.V. Thompson, The Effects of the Stress Dependence of Atomic Diffusivity on Stress Evolution Due to Electromigration, Journal of Applied Physics 82,4277 (1997).
  • J88. A. Gouldstone, Y-L. Shen, S. Suresh, and C.V. Thompson, Evolution of Stresses in Passivated and Unpassivated Metal Interconnects, Journal of Materials Research 13,1956 (1998).
  • J87. Y-C. Joo and C.V. Thompson, Electromigration-Induced Transgranular Failure Mechanisms in Single-Crystal Aluminum Interconnects, Journal of Applied Physics 81 6062, (1997).
  • J86. T. Chiang, H. Sawin, and C.V. Thompson, Surface Kinetic Study of Ion-Induced Chemical Vapor Deposition of Copper, J. of Vacuum Sci. And Tech. A15,3104, (1997).
  • J85. T. Chiang, H. Sawin, and C.V. Thompson, Ion-Induced Chemical Vapor Deposition of High Purity Cu Films at Room Temperature using a Microwave Discharge H Atom Beam Source, J. of Vacuum Sci. and Tech. A15,2677 (1997).
  • J84. B.D. Knowlton, J.J. Clement, and C.V. Thompson, Simulation of the Effects of Grain Structure and Grain Growth on Electromigration and the Reliability of Interconnects, Journal of Applied Physics 81,6073, (1997).
  • J83. H.J. Frost and C.V. Thompson, Computer Simulation of Grain Growth, Current Opinion in Solid State & Materials Science 1,361 (1996).
  • J82. C.V. Thompson and R. Carel, Stress and Grain Growth In Thin Films, J. Mech. Phys. Solids, 44,657 (1996).
  • J81. G. Bochi, C.A. Ballentine, H.E. Inglefield, R.C. O'Handley, and C.V. Thompson, Evidence for Strong Surface Magnetoelastic Anistropy in Epitaxial Cu/Ni/Cu(001) Sandwiches, Physical Review B53,R1729 (1996).
  • J80. R. Carel, C.V. Thompson, H.J. Frost, Computer Simulation of Strain Energy Effects vs. Surface and Interface Energy Effects on Grain Growth In Thin Films, Acta Metal. Mater. 44, 2479 (1996).
  • J79. H.E. Inglefield, G. Bochi, C.A. Ballentine, R.C. O'Handley, C.V. Thompson, Perpendicular Magnetic Anistropy In Epitaxial Cu/Ni/Cu/Si (001) Thin Solid Films 275,155 (1996).
  • J78. G. Bochi, C.A. Ballentine, H.E. Inglefield, C.V. Thompson, R.C. O'Handley, Perpendicular Magnetic Anistropy, Domains, and Misfit Strain in Epitaxial Ni/Cul-xNix/Si (001) Thin Films, Physical Review B52,7311 (1995).
  • J77. J. Funatsu, C.V. Thompson, and J. Melngailis, Laser Assisted Focused-Ion-Beam-Induced Deposition of Copper, Journal of Vacuum Science & Technology B14,179 (1996).
  • J76. C.V. Thompson and R. Carel, Texture Development in Polycrystalline Thin Films, Mat. Sci. and Eng. B32, 211 (1995).
  • J75. J.J. Clement and C.V. Thompson, Modeling Electromigration-Induced Stress Evolution in Confined Metal Lines, Journal of Applied Physics 78 ,900 (1995).
  • J74. Y-C. Joo and C.V. Thompson, Analytic Model for the Grain Structures of Near-Bamboo Interconnects, Journal of Applied Physics 76 ,7339 (1995).
  • J73. J.S. Ro, C.V. Thompson, and J. Melngailis, Microstructure of Gold Grown by Ion Induced Deposition, Thin Solid Films 258,333 (1995).
  • J72. J.S. Ro, C.V. Thompson, and J. Melngailis, Mechanism of Ion Beam Induced Deposition of Gold, J. Vac. Sci. Tech. B12, 1994.
  • J71. J.A. Floro, C.V. Thompson, R. Carel, and P.D. Bristowe, Competition Between Strain and Interface Energy During Epitaxial Grain Growth in Ag Films on Ni (100), J. Mat. Res. 9 p. 2411, 1994.
  • J70. A.D. Della Ratta, J. Melngailis and C.V. Thompson, Focused -Ion Beam Induced Deposition of Copper, J. Vac. Sci. Technol. B 11, p. 2195, 1993.
  • J69. C.V. Thompson and H. Kahn, Effects of Microstructure on Interconnect and Via Reliability: Multimodal Failure Statistics, J. of Electronic Materials 22, p. 581, 1993.
  • J68. C.V. Thompson, Texture Evolution During Grain Growth in Polycrystalline Films, Scripta Metallurgica et Mat. 28, p. 167, 1993.
  • J67. C.V. Thompson, The Yield Stress of Polycrystalline Thin Films, Journal of Materials Research 8, p. 237, 1993.
  • J66. C.V. Thompson, Thinly Spread (Review of The Materials Science of Thin Films by Milton Ohring), Nature 357, p. 292, 1992.
  • J65. J.A. Floro and C.V. Thompson, Numerical Analysis of Interface Energy-Driven Coarsening in Thin Films and Its Connection to Grain Growth, Acta Metallurgica et Materiala 41, p. 1137, 1993.
  • J64. H.P. Longworth and C.V. Thompson, An Experimental Study of Electromigration in Bicrystal Al Lines, Applied Physics Letters 60, p. 2219, 1992.
  • J63. E. Ma, L.A. Clevenger, C.V. Thompson, Nucleation of an Intermetallic at Thin-Film Interfaces, Journal of Materials Research 7, p. 1350, 1992.
  • J62. H.J. Frost, C.V. Thompson, and D.T. Walton, Simulation of Thin Film Grain Structures: II. Abnormal Grain Growth, Acta Metall. 40, p. 779, 1992.
  • J61. E. Jiran, and C.V. Thompson, Capillary Instabilities in Thin Continuous Films, Thin Solid Films 208, p. 23, 1992.
  • J60. H. Kahn and C.V. Thompson, The Effect of Applied Mechanical Stress on the Electromigration Failure Times of Aluminum Interconnects, Appl. Phys. Letters 59, p. 1308, 1991.
  • J59. C.V. Thompson, On the Role of Diffusion in Phase Selection During Reactions at Interfaces, J. Materials Research 7, p. 367, 1992.
  • J58. P.V. Evans, C.V. Thompson, and D.A. Smith, Absence of Electrical Activity at High Angle Grain Boundaries in Zone-Melt-Recrystallised Silicon-On-Insulator Films, Appl. Phys. Letts. 60, p. 439, 1992.
  • J57. A.D. Dubner, A. Wagner, J. Melngailis, and C.V. Thompson, The Role of the Ion/Solid Interaction in Ion Beam Induced Deposition of Gold, J. Appl. Phys. 70, p. 665, 1991.
  • J56. D.T. Walton, H.J. Frost, and C.V. Thompson, The Development of Near-Bamboo and Bamboo Microstructures in Thin Film Strips, Applied Physics Letters 61, p. 40, 1992.
  • J55. E. Ma, C.V. Thompson and L.A. Clevenger, Nucleation and Growth During Reactions in Multilayer Al/Ni Films: The Early Stages of Al3 Ni Formation, Journal of Applied Physics 69, p. 2211, 1991.
  • J54. H. Miura, E. Ma, and C.V. Thompson, Initial Sequence and Kinetics of Silicide Formation in the Cobalt/Amorphous-Silicon Multilayer Thin Films, Journal of Applied Physics 70, p. 4287, 1991.
  • J53. H. Longworth and C.V. Thompson, Abnormal Grain Growth in Aluminum Alloy Thin Films, Journal of Applied Physics 69, p. 3929, 1991.
  • J52. R.C. Cammarata, C.V. Thompson, C. Haydelden, and K.N. Tu, Silicide Precipitation and Silicon Crystallization in Nickel Implanted Amorphous Silicon Thin Films, J. Materials Research, 5, p. 2133, 1990.
  • J51. J. Cho and C.V. Thompson, Electromigration-induced Failures in Interconnects with Bimodal Grain Size Distributions, J. Electronic Materials 19, p. 1207, 1990.
  • J50. E. Ma, C.V. Thompson, L.A. Clevenger, and K.N. Tu, Self-Propagating Explosive Reactions in Al/Ni Multilayer Thin Films, Applied Physics Letters 57, p. 1262, 1990.
  • J49. E. Jiran and C.V. Thompson, Capillary Instabilities in Thin Films, J. Electronic Materials 19, p. 1153, 1990.
  • J48. H.J. Frost, C.V. Thompson, D.T. Walton, Simulation of Thin Film Grain Structures: I. Grain Growth Stagnation, Acta Metallurgica et Materiala 38, p. 1455, 1990.
  • J47. C.V. Thompson, Grain Growth in Thin Films, Annual Review of Materials Science 20, p. 245, 1990.
  • J46. L.A. Clevenger, C.V. Thompson, R.R. De Avillez, and E. Ma, Nucleation Controlled Phase Selection in Vanadium/Amorphous-Silicon Multilayer Thin Films, J. Vac. Sci. and Tech. A 8, p. 1566, 1990.
  • J45. C.V. Thompson, J. Floro, and H.I. Smith, Epitaxial Grain Growth in Thin Metal Films, J. Appl. Phys. 67 (9), p. 4099, May 1990.
  • J44. L.A. Clevenger, and C.V. Thompson, Explosive Silicidation in Nickel/Amorphous-Silicon Multilayer Thin Films, J. Appl. Phys. 67, p. 2894, 1990.
  • J43. L.A. Clevenger, and C.V. Thompson, Nucleation Limited Phase Selection During Reactions in Nickel Amorphous-Silicon Multilayer Thin Films, J. Appl. Phys. 67, p. 1325, 1990.
  • J42. H-J. Kim and C.V. Thompson, The Effects of Dopants on Surface-Energy-Driven Secondary Grain Growth in Silicon Films, J. Appl. Phys. 67, p. 757, 1990.
  • J41. R.R. De Avillez, L.A. Clevenger, C.V. Thompson and K.N. Tu, Quantitative Investigation of Titanium/Amorphous-Silicon Multilayer Thin Film Reactions, J. of Materials Research 5, p. 593, 1990.
  • J108. J. Greiser, P. Mullner, C.V. Thompson, and E. Arzt, Growth of Giant Grains in Silver Thin Films, Scripta Materialia 41, 709 (1999).
  • J106. C.V. Thompson, On the Grain Size and Coalescence Stress Resulting From Nucleation and Growth Processes During Formation of Polycrystalline Thin Films, J. Mater Res. 14, 3164 (1999).
  • J105. V.K. Andleigh, V.T. Srikar, Y.T. Park, and C.V. Thompson, Mechanism Maps for Electrmigration-Induced Failure of Metal and Alloy Interconnects, J. Appl. Phys. 86, 6737 (1999).
  • J104. C.S. Hau-Riege and C.V. Thompson, Microstructural Evolution Induced by Scanned Laser Annealing in Al Interconnects, Appl. Phys. Let. 75, 1464 (1999).
  • J103. Y.-J. Park, V.K. Andleigh, and C.V. Thompson, Simulations of Stress Evolution and the Current-density Scaling of Electromigration-Induced failure Times in Pure and Alloyed Interconnects, J. Appl. Phys. 85, 3546 (1999).
  • J102. H. Gao, L. Zhang, W.D. Nix, C.V. Thompson, and E. Arzt, Crack-Like Grain Boundary Diffusion Wedges in Thin Metal Films, Acta Materialia 47, 2865 (1999).
  • J101. S.P. Riege and C.V. Thompson, Modeling of Texture Evolution in Copper Interconnects Annealed in Trenches, Scripta Materialia 41, 403 (1999).
  • J100. V.T. Srikar and C.V. Thompson, Dislocation Pile-ups as Sites for Formation of Electromigration-Induced Transgranular Slit-Like Voids in Interconnects, Scripta Materialia 42, 97 (2000).
 1989  1988  1987 1986 1985 1984 1983 1979  1976

 

  • J40. F. Spaepen and C.V. Thompson, Calorimetric Studies of Reactions in Thin Films and Multilayers, Applied Surface Science 38, p. 1, 1989.
  • J39. J.E. Palmer, G. Burns, C.G. Fonstad, and C.V. Thompson, The Effect of As4 Overpressure on Initial Growth of Gallium Arsenide on Silicon by MBE, Appl. Phys. Letts. 55, p. 990, 1989.
  • J38. P.G. Blauner, Y. Butt, J.S. Ro, C.V. Thompson, and J. Melngailis, Focused Ion Beam Induced Deposition of Low Resistivity Gold Films, J. of Vac. Sci. and Tech. B 7, p. 1816 1989
  • J37. R.R. DeAvillez, L.A. Clevenger, and C.V. Thompson, Relaxation Phenomena in Evaporated Amorphous Silicon Films, Journal of Materials Research 4, p. 1057, 1989.
  • J36. K.R. Coffey, L.A. Clevenger, K Barmak, D.A. Rudman, and C.V. Thompson, Experimental Evidence for Nucleation During Thin Film Reactions, Appl. Phys. Letts. 55, p. 852, 1989.
  • J35. J. Cho and C.V. Thompson, The Grain Size Dependence of Electromigration Induced Failures in Narrow Interconnects, Appl. Phys. Letts. 54, p. 2577, 1989
  • J34. H.A. Atwater, and C.V. Thompson, The Role of Point Defects in Ion-Bombardment-Enhanced and Dopant-Enhanced Grain Growth in Silicon Thin Films, J. of Nuclear Instruments and Methods in Physics Research B 39, 64, 1989.
  • J33. H.A. Atwater, C.V. Thompson, and H.I. Smith, Mechanisms for Crystallographic Orientation in the Crystallization of Thin Silicon Films From the Melt, J. of Materials Research 3, p. 1232, 1988.
  • J32. H.J. Frost, and C.V. Thompson, Computer Simulation of Microstructure Evolution in Thin Films, Journal of Electronic Materials 17, p. 447, 1988.
  • J31. H.A. Atwater, and C.V. Thompson, Point Defect Enhanced Grain Growth in Silicon Thin Films - the Role of Ion Bombardment and Dopants, Appl. Phys. Letts. 53, 2155, 1988.
  • J30. H.A. Atwater, C.V. Thompson, and H.I. Smith, Ion Bombardment Enhanced Grain Growth in Germanium, Silicon and Gold Thin Films, J. Appl. Phys. 64, p. 2337, 1988.
  • J29. H.J. Kim and C.V. Thompson, Kinetic Modeling of Grain Growth in Polycrystalline Silicon Films Doped with Phosphorus or Boron, J. Electrochem. Soc. 135, p. 2312, 1988.
  • J28. C.V. Thompson, Coarsening of Particles on a Planar Substrate: Interface Energy Anistropy and Application to Grain Growth in Thin Films, Acta Metallurgica 36, p. 2929, 1988.
  • J27. L.A. Clevenger, C.V. Thompson, R.C. Cammarata, and K.N. Tu, Reaction Kinetics of Nickel/Silicon Multilayer Films, Appl. Phys. Letts. 52, p. 795, 1988.
  • J26. H.A. Atwater, C.V. Thompson, and H.I. Smith, Interface Limited Grain Boundary Motion During Ion Bombardment, Physical Review Letters 60, p. 112, 1988.
  • J25. H.J. Frost, C.V. Thompson, C.L. Howe, and J. Whang, A Two-Dimensional Computer Simulation of Capillary-Driven Grain Growth: Preliminary Results, Scripta Metallurgica 22, p. 65, 1988.
  • J24. R.C. Cammarata, C.V. Thompson, and K.N. Tu, NiSi2 Precipitation in Nickel Implanted Silicon Films, Appl. Phys. Letts. 51, p. 1106, 1987.
  • J23. J.S. Im, H. Tomita, and C.V. Thompson, Cellular and Dendritic Morphologies on Stationary and Moving Liquid-Solid Interfaces in Zone Melting Recrystallization, Appl. Phys. Letts. 51, p. 685, 1987.
  • J22. J.E. Palmer, C.V. Thompson, and H.I. Smith, Grain Growth and Grain Size Distributions in Thin Germanium Films, J. Appl. Phys. 62, p. 2492, 1987.
  • J21. C.V. Thompson and J. Cho, A New Electromigration Test Structure for Rapid Statistical Evaluation of Interconnect Technology, IEEE Electron Device Letters 7, p. 667, 1987.
  • J20. S.M. Garrison, R.C. Cammarata, C.V. Thompson, and H.I. Smith, Surface-Energy-Driven Grain Growth During Rapid Thermal Annealing (<10ns) of Thin Silicon Films, J. Appl. Phys. 61, p. 1652, 1987.
  • J19. C.V. Thompson, H.J. Frost, and F. Spaepen, The Relative Rates of Secondary and Normal Grain Growth, Acta Metallurgica 35, p. 887, 1987.
  • J18. H.J. Frost and C.V. Thompson, The Effect of Nucleation Conditions on the Topology and Geometry of Two-Dimensional Grain Structures, Acta Metallurgica 35, p. 529, 1987.
  • J17. D.J. Srolovitz and C.V. Thompson, Beading Instabilities in Thin Film Lines with Bamboo Microstructures, Thin Solid Films 139, p. 133, 1986.
  • J16. C.C. Wong, H.I. Smith, and C.V. Thompson, Surface-Energy-Driven Secondary Grain Growth in Thin Au Films, Appl. Phys. Letts. 48, p. 335, 1986.
  • J15. H-J. Kim and C.V. Thompson, Compensation of Grain Growth Enhancement in Doped Silicon Films, Appl. Phys. Letts. 48, p. 399, 1986.
  • J14. C.V. Thompson, Secondary Grain Growth in Thin Films of Semiconductors: Theoretical Aspects, J. Appl. Phys. 58, p. 763, 1985.
  • J13. T. Yonehara, H.I. Smith, C.V. Thompson, and J.E. Palmer, Graphoepitaxy of Ge on SiO2 by Solid State Surface-Energy-Driven Secondary Grain Growth, Appl. Phys. Lett. 45, p. 631, 1984.
  • J12. H.A. Atwater, H.I. Smith, C.V. Thompson, and M.W. Geis, Zone Melting Recrystallization of Thick Silicon on Insulator Films, Materials Letters 2, p. 269 1984.
  • J11. C.V. Thompson and H.I. Smith, Surface-Energy-Driven Secondary Grain Growth in Ultrathin (<100nm) Films of Silicon, Appl. Phys. Lett. 44, p. 603, 1984
  • J10. H.I. Smith, C.V. Thompson, and H.A. Atwater, Graphoepitaxy and Zone Melting Recrystallization of Patterned Films, J. Cryst. Growth 65, p. 337, 1983.
  • J9. C.V. Thompson and F. Spaepen, Homogeneous Crystal Nucleation in Binary Metallic Melts, Acta Metallurgica 31, p. 2021, 1983.
  • J8. K.F. Kelton, A.L. Greer, and C.V. Thompson, Transient Nucleation in Condensed Systems, J. Chem. Physics 79, p. 6261, 1983.
  • J7. H.I. Smith, M.W. Geis, C.V. Thompson, and H.A. Atwater, Silicon-on-Insulator by Graphoepitaxy and Zone-Melting Recrystallization of Patterned Films, J. of Crystal Growth 63, p. 527, 1983.
  • J6. H.A. Atwater, C.V. Thompson, H.I. Smith, and M.W. Geis, Orientation Filtering by Growth Velocity Competition in Zone-Melting Recrystallization of Silicon on SiO2, Appl. Phys. Lett. 43, p. 1126, 1983
  • J5. C.V. Thompson, A.L. Greer, and F. Spaepen, Crystal Nucleation in Amorphous (Au100-yCuy)77Si9Ge14 Alloys, Acta Metallurgica 31, p. 1883, 1983.
  • J4. H.I. Smith, C.V. Thompson, M.W. Geis, R.A. Lemons, and MA. Bosch, The Mechanism of Orientation in Si Graphoepitaxy by Laser or Strip-Heater Recrystallization, J. Electrochem. Soc. 130, p. 2050, 1983.
  • J3. M.W. Geis, H.I. Smith, D.J. Silversmith, R.W. Mountain, and C.V. Thompson, Solidification-Front Modulation to Entrain Subboundaries in Zone-Melting Recrystallization of Si on SiO2, J. Electrochem. Soc. 130, p. 1179, 1983.
  • J2. C.V. Thompson and F. Spaepen, On the Approximation of the Free Energy Change on Crystallization, Acta Metallurgica 27, p. 1855, 1979.
  • J1. J.O. Farlow, C.V. Thompson, and D.E. Rosner, Plates of the Dinosaur Stegosaurus: Forced Convection Heat Loss Fins?, Science 192, p. 1123, 1976.

 

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