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Journal Publications 2000 - 2007

2007 2006 2005 2004 2003 2002 2001 2000


  • J165. H.L. Leong, C.L Gan, C.V. Thompson, K.L Pey, and H.Y. Li, Application of Contact Theory to Metal-Metal Bonding of Silicon Wafers, to appear in J. Appl. Phys.
  • J164. R. Tadepalli, K.T. Turner and C.V. Thompson, Effects of Patterning on the Interface Toughness of Wafer-Level Cu-Cu Bonds, to appear in Acta Mater.
  • J163 Z.-S. Choi, R. Moenig, and C.V. Thompson, Effects of Microstructure on the Formation, Shape, and Motion of Voids During Electromigration in Passivated Copper Interconnects, to appear in J. Mater. Res.
  • J162. Z.-S. Choi, R. Moenig, and C. V. Thompson, Activation Energy and Pre-Factor for Surface Electromigration and Void Drift in Cu Interconnects, to appear in J.Appl. Phys.
  • J161. R. Tadepalli, K.T. Turner, and C.V. Thompson, Mixed Mode Interface Toughness of Wafer- Level Cu-Cu Bonds Using Asymmetric Chevron Test, to appear in J. Mech. Phys. Sol.
  • J160. Z.-S. Choi, R. Moenig, and C. V. Thompson, Dependence of the Electromigration Flux on the Crystallographic Orientations of Different Grains in Polycrystalline Copper Interconnects, Appl. Phys. Letts. 90, 241913 (2007).
  • J159. S.M. Alam, C.L. Gan, C.V. Thompson, D.E. Troxel, Reliability computer-aided design tool for full-chip electromigration analysis and comparison with different interconnect metallizations, Microelectronics Journal 38, 463 (2007).
  • J157. K.Y. Zang KY, Y.D.Wang YD, L.S. Wang, S. Tripathy, S.J. Chua, and C.V. Thompson, Nanoheteroepitaxy of GaN on a nanopore array of Si(111) surface, Thin Solid Films 515 (10): 4505 (2007).
  • J156. C.W. Chang, C.V. Thompson, C.L. Gan, K.L. Pey, W.K. Choi, and Y. K. Lim,Effects of Micro-Voids on the Line-Width Dependence of Electromigration Failure of Dual-Damascene Copper Interconnects,, Appl. Phys. Letts. 90, 193505 (2007).
  • J155. Rajappa Tadepalli and Carl V. Thompson, Formation of Cu–Cu Interfaces with Ideal Adhesive Strengths via Room Temperature Pressure Bonding in Ultrahigh Vacuum, , Appl. Phys. Lett. 90, 151919 (2007).
  • J154. H.Li, Q. Zhang, N. Peng, N. Liu, Y.C. Lee, O.K. Tan, N. Marzari, and C.V. Thompson, Charge-Trapping Effects Caused by Ammonia in Carbon Nanotubes, J. Nanoscience and Nanotechnology 7, 335 (2007).
  • J153. R. Krishnan and C.V. Thompson, Mono-Domain High Aspect Ratio 2-D and 3-D Ordered Porous Alumina structures with Independently Controlled Pore Spacing and Diameter, to appear in Advanced Materials
  • J152. C.-W. Pao, D.J. Srolovitz, and C.V. Thompson, Effects of Surface Defects on Surface Stress, Physical Review B74, 155437 (2006).
  • J151. C.W. Chang, Z.S. Choi, C.V. Thompson, et al. Electromigration Resistance in a Short Three-Contact interconnect Tree, J. Appl. Phys. 99, 094505 (2006).
  • J150. K.Y. Zang, Y.D. Wang, S. J. Chua, L.S. Wang, S. Tripathy and C.V. Thompson, Nanoheteroepitaxial Lateral Overgrowth of GaN on Nanoporous Si (111), Appl. Phys. Letts. 88, 141925 (2006).
  • J149. C. Friesen and C.V. Thompson CV, Comment on Compressive Stress in Polycrystalline Volmer-Weber fFlms, Physical Review Letters 95, 229601 (2005).
  • J148. K.Y.Zang, L.S. Wang, S.J. Chua, and C.V. Thompson, Structural Analysis of Metalorganic Chemical Vapor Deposited AlN Nucleation Layers on Si(111), J. Cryst. Growth 268, 515 (2004).
  • J147. H.Q. Le, S.J. Chua, Y.W. Koh, Growth of Single Crystal ZnO Nanorods on GaN Using an Aqueous Solution Method, Appl. Phys. Let. 87, 101908 (2005).
  • J146. T. Trimble, L. Tang, N. Vasiljevic, N. Dimitrov, M. van Schilfgaarde, C. Friesen, C. V. Thompson, S. C. Seel, J.A. Floro, and K. Sieradzki, Anion Adsorption Induced Reversal of Coherency Strain, Phys. Rev. Letts. 95, 166106 (2005).
  • J145. R. Krishnan, H.Q. Nguyen, Carl V. Thompson, W.K. Choi, and Y.L. Foo, Wafer-Level Ordered Arrays of Carbon Nanotubes with Controlled Size and Spacing on Silicon, Nanotechnology 16, 841 (2005).
  • J143. A.L. Giermann and C.V. Thompson, Solid State Dewetting for Ordered Arrays of Crystallographically Oriented Metal Particles, Appl. Phys. Lett. 86, 121903 (2005).
  • J142. C.V. Thompson, Perspectives on Experiments, Modeling and Simulations of Grain Growth, to appear in “The Handbook of Materials Modeling, Volume I (Methods and Models)”, ed. Sidney Yip.
  • J141. C. Friesen and C.V. Thompson, Correlation of Stress and Atomic-Scale Surface Roughness Evolution During Intermittent Homoepitaxial Growth of (111)-Oriented Ag and Cu, Phys. Rev. Letts. 93, 056104 (2004).
  • J140. J. Jia, M. Li, C.V. Thompson, Amorphization of Silicon by Femtosecond Laser Pulses, Appl. Phys. Lett. 84, 3205 (2004).
  • J139. K. Zang, S. J. Chua, L.S. Wang and C.V. Thompson, Evolution of AlN Buffer Layers on Silicon and Effects on the Properties of Epitaxial GaN Films, Phys Stat Sol.0, 2067 (2004).
  • J138. C. Friesen, S.C. Seel, and C.V. Thompson, Reversible Stress Changes at All Stages of Volmer-Weber Film Growth, J. Appl. Phys. 95, 1011 (2004).
  • J136. J. Zhao, L. Lu, C.V. Thompson, Y.F. Lu, and W.D. Song, Preparation of (001)-Oriented PZT Thin Films on Silicon Wafers Using Pulsed Laser Deposition, J. Cryst. Growth 225, 173 (2001).
  • J135. K.P. Liew, R.A. Bernstein, and C.V. Thompson, Stress Development and Relaxation During Reactive Formation of Ni2Si Films, J. Materials Research 19, 676 (2004).
  • J134. S.M. Alam, D.E. Troxel, and C.V. Thompson, Layout-Specific Circuit Evaluation in 3D Integrated Circuits, Analog Integrated Circuits and Signal Processing 35, 199 (2003).
  • J133. F. Ross, C.V. Thompson, T. Chiang and H.H. Sawin, Ion-Induced Chemical Vapor Deposition of Copper Films with Nano-Cellular Microstructures, Appl. Phys.Letts. 83, 1225 (2003).
  • J132. S.C. Seel and C.V. Thompson, Piezoresistive Microcantilevers for in-situ Stress Measurements During Thing Film Deposition, Rev. Sci. Instrum. 76, 075103 (2005).
  • J131. C.L. Gan, C.V. Thompson, K.L. Pey and W.K. Choi, Experimental Characterization and Modeling of the Reliability of 3-Terminal Dual-Damascene Cu Interconnect Trees, J. Appl. Phys. 94, 1222 (2003).
  • J130. S.K. Donthu, M.M. Vora, S.K. Lahiri, C.V. Thompson, and S. Yi, Activation Energy Determination For Recrystallization In Electroplated Copper Films Using Differential Scanning Calorimetry, J. Electronic Materials 32, 531 (2003).
  • J129. S.C. Seel and C.V. Thompson, Tensile Stress Generation During Island Coalescence for Variable Island-Substrate Contact Angle, J. Appl. Phys. 93, 9038 (2003).
  • J128. C. Friesen and C.V. Thompson, Reversible Stress Relaxation during Precoalescence Interruptions of Volmer-Weber Thin Film Growth, Phys. Rev. Letters, 89 (2), 126103 (2002).
  • J127. C.L. Gan, C.V. Thompson, K.L Pey, W.K. Choi, H.L. Tay and M.K. Radhakrishnan, Effect of Current Direction on the Lifetime of Different Levels of Cu Dual-Damascene Metallization, Appl. Phys. Letters 79, 4592 (2001).
  • J126. M.J. Kobrinsky, G. Dehm, C. V. Thompson, and E. Arzt, Effects of Thickness on the Characteristic Length Scale of Dislocation Plasticity in Ag Thin Films, Acta Mater. 49, 3597-3607 (2001).
  • J125. C. S. Hau-Riege and C.V. Thompson, Electromigration in Cu Interconnects with Very Different Grain Structures, Appl. Phys. Letters 78, 3451 (2001).
  • J124. J. A. Floro, S. J. Hearne, J. A. Hunter, and P. Kotula, E. Chason, S. C. Seel and C. V. Thompson, The Dynamic Competition Between Stress Generation and Relaxation Mechanisms During Coalescence of Volmer-Weber Thin Films, J. Appl. Phys. 89, 4886 (2001).
  • J123. C.V. Thompson, Structure Evolution During Processing of Polycrystalline Films, Annual Reviews of Materials Science 30,159 (2000).
  • J122. C.V. Thompson, Grain Growth and Evolution of Other Cellular Structures, Solid State Physics, 55 (2000).
  • J121. S.C. Seel, C.V. Thompson, S.J. Hearne and J.A. Floro, Tensile Stress Evolution During Deposition of Volmer-Weber Thin Films, J. Appl. Phys 88, 7079-7086 (2000).
  • J120. M.J. Kobrinsky, C.V. Thompson, and M. Gross, Diffusional Creep in Damascene Cu Lines, J. Appl. Phys 89, 91-98 (2001).
  • J119. S.P. Hau-Riege and C.V. Thompson, The Effects of the Mechanical Properties of the Confinement Material on Electromigration in Metallic Interconnects, J. Mater. Res. 15, 1797 (2000).
  • J118. S.P. Hau-Riege and C.V. Thompson, Electromigration-Saturation in a Simple Interconnect Tree, J. Applied Physics 88, 2382-85 (2000).
  • J117. C.S. Hau-Riege and C.V. Thompson, The Effects of Microstructural Transitions at Width Transitions on Interconnect Reliability, J. Appl. Phys. 87, 8467 (2000).
  • J115. C.S. Hau-Riege, S.P. Hau-Riege and C.V. Thompson, Simulation of Microstructural Evolution Induced by Scanned Laser Annealing of Metallic Interconnects, J. of Elec. Mat. 30, 11-16 (2001).
  • J114. C.S. Hau-Riege and C.V.Thompson, Use of Scanned laser Annealing to Control the Bamboo Grain Length of Cu Interconnects, Appl. Phy. Lett. 77, 352 (2000).
  • J113. S.P. Hau-Riege and C.V. Thompson, Experimental Characterization and Modeling of The Reliability of Interconnect Trees, J. Applied Physics 89, 601-609 (2001).
  • J112. W.Fayad, M.J. Kobrinsky, and C.V.Thompson, An Analytic Model for the Development of Bamboo Microstructures in Thin Film Strips Undergoing Normal Grain Growth, Phys. Rev. B62, 5221 (2000).
  • J111. W.Fayad, V. K. Andleigh, and C.V. Thompson, Modeling of the Effects of Crystallographic Orientation on Electromigration-Limited Reliability of Interconnects with Bamboo Grain Structures, J. Material Research 16, no. 2, 413-416 (2001).
  • J109. S.P. Hau-Riege and C.V. Thompson, In-Situ Transmission Electron Microscope Studies of the Kinetics of Abnormal Grain Growth in Electroplated Copper Films, App. Phy. Let. 76, 309 (2000).
  • J108. J. Greiser, P. Mullner, C.V. Thompson, and E. Arzt, Growth of Giant Grains in Silver Thin Films, Scripta Materialia 41, 709 (1999).
  • J107. M.J. Kobrinsky and C.V. Thompson, Activation Volume for Inelastic Deformation in Polycrystalline Ag Thin Films, Acta Materialia 48, 625 (2000).

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